Description
D561 www.daysemi.jp P-Channel 100 V (D-S) MOSFET .
Features
* PRODUCT SUMMARY
VDS (V) - 100 RDS(on) () 0.295 at VGS = - 10 V 0.315 at VGS = - 6 V ID (A) - 15 - 15 Qg (Typ. ) 23.2 nC
* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET Power MOSFET
* 100 % Rg and UIS Tested
* Compliant to RoHS Directive 2002/95/EC
Applications
* Active Clamp in Intermediate DC/DC Power Supplies
* H-Bridge High Side Switch for Lighting Application
TO-252
S
G
G
D
S
D P-Channel MOSFET
Top View
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC