* TrenchFET® Power MOSFETS
* 175 °C Junction Temperature
* Low Thermal Resistance Package Available RoHS
* COMPLIANT TO-252 D GDS Top View G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS
DTU30N10 Datasheet (254.29 KB)
DTU30N10
Din-Tek
254.29 KB
N-channel mosfet.
N-Channel 100-V (D-S) MOSFET
'7830110
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PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (:)
100
0.0 at VGS = 10 V 0.0 at VGS = V
ID .
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PRODUCT SUMMARY
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VDS (V)
RDS(on) (Ω)
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ID (A) 120.
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VDS (V)
RDS(on) (Ω)
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VDS (V)
RDS(on) (mΩ )(Typ.)
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38 at VGS = - 10 V
60 at VGS = - 4.5 V
ID.
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VDS (V)
RDS(on) ()
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VDS (V)
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rDS(on) (W)
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TO-252
GDS Top View
ID (A)
35
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PRODUCT SUMMARY
N-Channel P-Channel
VDS (V) 30
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N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 30 RDS(on) (Ω) 0.0041 at VGS = 10 V 0.0059 at VGS = 4.5 V ID (A)a, g 60g .
