* Low Gate Charge Qg Results in Simple Drive Requirement
* Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Available RoHS
* COMPLIANT
* Fully Characterized Capacitance and Avalanche Voltage and Current
* Compliant to RoHS directive 2002/95/EC TO-220AB T
DTU5N65SJ Datasheet (518.60 KB)
DTU5N65SJ
Din-Tek
518.60 KB
N-channel super junction power mosfet.
DTP5N65SJ/DTP5N65FSJ/DTU5N65SJ/DTL5N65SJ
www.din-tek.jp
/$IBOOFM57 %4
4VQFS+VODUJPOPower MOSFET
PRODUCT SUMMARY
VDS (V)
650
RDS(on) (Ω) .
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4VQFS+VODUJPOPower MOSFET
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VDS (V)
600
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VDS (V)
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VDS (V) RDS(on) (Ω) Qg (Max.).
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VDS (V) 60
RDS(on) () 0.026 at VGS = 10 V 0.031 at VGS = 4.5 V
ID (A)a 50 50
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DTU50P03 - P-Channel MOSFET
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VDS (V) 200
RDS(on) () 0.283 at VGS = 10 V
ID (A) 5
TO-252
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VDS (V) 60
RDS(on) () 0.0093 at VGS = 10 V 0.0122 at VGS = 4.5 V
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FEATURES
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