DMP21D5UFB4 P-Channel MOSFET

Diodes Incorporated

Description

DMP21D5UFB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS RDS(on) max 1.0Ω @ VGS = -4.5V ID TA = 25°C -700mA -600mA -500mA -380mA Featu.
and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching perform.

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Datasheet Specifications

Part number: DMP21D5UFB4
Manufacturer: DIODES ↗ Incorporated
File Size: 250.36 KB
Datasheet: DMP21D5UFB4-DiodesIncorporated.pdf
Description: P-Channel MOSFET

Features

* Low On-Resistance Very Low Gate Threshold Voltage VGS(TH), 1.0V max Low Input Capacitance Fast Switching Speed Ultra-Small Surfaced Mount Package Ultra-low package profile, 0.4mm maximum package heigh

Applications

* This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
* DC-DC Converters Power management functions Mechanical Data

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DMP21D5UFB4 P-Channel MOSFET Diodes Incorporated

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