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2N7002W N-Channel MOSFET

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Description

2N7002W N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary BVDSS 60V RDS(ON) Max 7.5Ω @ VGS = 5V ID Max TA = +25°C 115mA .
and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it idea.

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Datasheet Specifications

Part number
2N7002W
Manufacturer
DIODES ↗
File Size
318.99 KB
Datasheet
2N7002W-Diodes.pdf
Description
N-Channel MOSFET

Features

* Low-On Resistance
* Low Gate Threshold Voltage
* Low Input Capacitance
* Fast Switching Speed
* Low Input/Output Leakage
* Ultra-Small Surface Mount Package
* Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
* Halogen and Antimo

Applications

* requiring specific change control (i. e. : parts qualified to AEC-Q101, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at https://www. diodes. com/products/automotive/automotiveproducts/.

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