DMN2100UDM N-Channel MOSFET

Diodes

Description

NEW PRODUCT Product Summary V(BR)DSS 20V RDS(ON) max 55mΩ @ VGS = 4.5V 70mΩ @ VGS = 2.5V 90mΩ @ VGS = 1.8V 130mΩ @ VGS = 1.5V ID max TA = 25°C 4.0.
and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching perform.

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Datasheet Specifications

Part number: DMN2100UDM
Manufacturer: DIODES ↗
File Size: 176.33 KB
Datasheet: DMN2100UDM-Diodes.pdf
Description: N-Channel MOSFET

Features

* Low On-Resistance
* Low Gate Threshold Voltage
* Low Input Capacitance
* Fast Switching Speed
* ESD Protected Gate
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3)
* Qualifi

Applications

* This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
* General Purpose Interfacing Switch
* Power Management Functions DMN2100UDM

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DMN2100UDM N-Channel MOSFET Diodes

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