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DMN2112SN

N-Channel FET

DMN2112SN Features

* Low On-Resistance

* ESD Protected Gate

* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

* Halogen and Antimony Free. “Green” Device (Note 3)

* For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/104/200, PPAP capable, and

DMN2112SN General Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Applications
* Notebook computers
* Portable phones
* PCMCIA cards and battery powered circ.

DMN2112SN Datasheet (909.74 KB)

Preview of DMN2112SN PDF

Datasheet Details

Part number:

DMN2112SN

Manufacturer:

DIODES ↗ Incorporated

File Size:

909.74 KB

Description:

N-channel fet.
NEW PRODUCT NOT RECOMMENDED FOR NEW DESIGN CONTACT US DMN2112SN N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary BVDSS 20V RDS.

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TAGS

DMN2112SN N-Channel FET Diodes Incorporated

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