DMN2112SN Datasheet - Diodes Incorporated

DMN2112SN N-Channel FET

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Applications * Notebook computers * Portable phones * PCMCIA cards and battery powered circ.

DMN2112SN Features

* Low On-Resistance

* ESD Protected Gate

* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

* Halogen and Antimony Free. “Green” Device (Note 3)

* For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/104/200, PPAP capable, and

DMN2112SN_DiodesIncorporated.pdf