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DMN2112SN N-Channel FET

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Description

NEW PRODUCT NOT RECOMMENDED FOR NEW DESIGN CONTACT US DMN2112SN N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary BVDSS 20V RDS.
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for.

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Features

* Low On-Resistance
* ESD Protected Gate
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3)

Applications

* Applications
* Notebook computers
* Portable phones

DMN2112SN Distributors

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DMN2112SN N-Channel FET Diodes Incorporated
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DMN2004DWK
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