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DMN2230UQ N-Channel MOSFET

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Description

NEW PRODUCT Product Summary BVDSS 20V RDS(ON) max 110mΩ @ VGS = 4.5V 145mΩ @ VGS = 2.5V 230mΩ @ VGS = 1.8V ID max TA = +25°C 2A 1.7A 1.3A DMN2230.
and Applications This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it idea.

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Features

* Low On-Resistance
* Low Gate Threshold Voltage
* Low Input Capacitance
* Fast Switching Speed
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3)
* Qualified to AEC-Q101 Standards for High Reliability
* PPAP

Applications

* This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
* General Purpose Interfacing Switch
* Power Management Functions
* Boost Application
* Analog Swi

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