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DMN2215UDM
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
Dual N-Channel MOSFET Low On-Resistance
100m @VGS = 4.5V, ID = 2.5A 140m @VGS = 2.5V, ID = 1.5A 215m @VGS = 1.8V, ID = 0.1A Very Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed ESD Protected Gate to 2kV HBM Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: SOT26 Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish Matte Tin Annealed over Copper
Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.