Part number:
DMN22M5UFG
Manufacturer:
File Size:
575.08 KB
Description:
20v n-channel mosfet.
* BVDSS 20V RDS(ON) Max 2.0m @ VGS = 4.5V 2.6m @ VGS = 2.5V ID Max TC = +25°C 27A 23A Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Applications
DMN22M5UFG Datasheet (575.08 KB)
DMN22M5UFG
575.08 KB
20v n-channel mosfet.
📁 Related Datasheet
DMN2215UDM - Dual N-Channel MOSFET
(Diodes)
NEW PRODUCT
DMN2215UDM
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
Dual N-Channel MOSFET Low On-Resistance
100m @VGS = 4.
DMN2230U - N-Channel MOSFET
(Diodes)
NEW PRODUCT
YM
NOT RECOMMENDED FOR NEW DESIGN USE DMN2025U
DMN2230U
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Low On-Resistance 110m @ VGS =.
DMN2230UQ - N-Channel MOSFET
(Diodes)
NEW PRODUCT
Product Summary
BVDSS 20V
RDS(ON) max 110mΩ @ VGS = 4.5V 145mΩ @ VGS = 2.5V 230mΩ @ VGS = 1.8V
ID max TA = +25°C
2A
1.7A
1.3A
DMN2230.
DMN2250UFB - N-Channel MOSFET
(Diodes)
A D VNAENWC EP IRNOFDOURCMTA T I O N
DMN2250UFB
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 20V
RDS(on) max
0.17Ω @ VGS = 4.5V 0.23.
DMN2004DMK - DUAL N-CHANNEL MOSFET
(Diodes)
NEW PRODUCT
Features
Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low In.
DMN2004DWK - DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
(Diodes Incorporated)
NEW PRODUCT
Product Summary
V(BR)DSS 20V
RDS(on) max 0.55Ω @ VGS = 4.5V
ID TA = +25°C
540mA
Description
This MOSFET is designed to minimize the o.
DMN2004DWKQ - Dual N-Channel MOSFET
(Diodes)
NEW PRODUCT
Product Summary
V(BR)DSS 20V
RDS(ON) max 0.55Ω @ VGS = 4.5V
ID TA = +25°C
540mA
Description
This MOSFET is designed to minimize the o.
DMN2004K - N-CHANNEL ENHANCEMENT MODE MOSFET
(Diodes Incorporated)
.