* Low RDS(ON)
* ensures on state losses are minimized
* Small form factor thermally efficient package enables higher density end products
* Occupies just 33% of the board area occupied by SO-8 enabling smaller end product
* ESD Protected Gate
* Totally
DMN3018SFG Datasheet (242.50 KB)
DMN3018SFG
242.50 KB
N-channel mosfet.
NEW PRODUCT
DMN3018SFG
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 30V
RDS(ON) max
21mΩ @ VGS = 10V 35mΩ @ VGS = 4.5V
ID max T.
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DMN3018SFGQ
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 30V
RDS(ON) max
21mΩ @ VGS = 10V 35mΩ @ VGS = 4.5V
ID max TA .
DMN3018SSD - Dual N-Channel MOSFET
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NEW PRODUCT ADVANCE INFORMATION
DMN3018SSD
30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 30V
RDS(ON) max
22mΩ @ VGS = 10V 30mΩ .
DMN3018SSS - N-Channel MOSFET
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NEW PRODUCT ADVANCE INFORMATION
DMN3018SSS
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 30V
RDS(ON) max 21mΩ @ VGS = 10V 35mΩ @ .
DMN3010LFG - N-Channel MOSFET
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DMN3010LFG
N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI®
Product Summary
V(BR)DSS 30V
RDS(ON)
8.5mΩ @ VGS = 10V 10.5mΩ @ VGS = 4.5V
ID T.
DMN3010LK3 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
FEATURES ·Drain Current –ID= 43A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 30V(Min) ·Static Drain-Source On-Resistance
:.
DMN3010LK3 - N-Channel MOSFET
(Diodes)
DMN3010LK3
Green N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 30V
RDS(ON)
9.5mΩ @ VGS = 10V 11.5mΩ @ VGS = 4.5V
ID TC = +25°C
43A
39.
DMN3010LSS - Single N-channel MOSFET
(Diodes Incorporated)
NEW PRODUCT
Features
• Low On-Resistance • 9mΩ @ VGS = 10V • 13mΩ @ VGS = 4.5V
• Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching .
DMN3011LSS - 30V N-CHANNEL MOSFET
(DIODES)
DMN3011LSS
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 30V
RDS(ON) Max 10mΩ @ VGS = 10V 16mΩ @ VGS = 4.5V
ID Max (Note 5) TA = +25.
