* Low On-Resistance
* 100% UIS (Avalanche) Rated
* ESD Protected Gate
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3)
* Qualified to AEC-Q101 Standards for High Reliability Mechanical Data
* Case: SO-8
* Ca
DMN3018SSD Datasheet (468.74 KB)
DMN3018SSD
468.74 KB
Dual n-channel mosfet.
NEW PRODUCT ADVANCE INFORMATION
DMN3018SSD
30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 30V
RDS(ON) max
22mΩ @ VGS = 10V 30mΩ .
📁 Related Datasheet
DMN3018SSS - N-Channel MOSFET
(Diodes)
NEW PRODUCT ADVANCE INFORMATION
DMN3018SSS
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 30V
RDS(ON) max 21mΩ @ VGS = 10V 35mΩ @ .
DMN3018SFG - N-Channel MOSFET
(Diodes)
NEW PRODUCT
DMN3018SFG
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 30V
RDS(ON) max
21mΩ @ VGS = 10V 35mΩ @ VGS = 4.5V
ID max T.
DMN3018SFGQ - N-Channel MOSFET
(Diodes)
NEW PRODUCT
DMN3018SFGQ
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 30V
RDS(ON) max
21mΩ @ VGS = 10V 35mΩ @ VGS = 4.5V
ID max TA .
DMN3010LFG - N-Channel MOSFET
(Diodes)
NEW PRODUCT
DMN3010LFG
N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI®
Product Summary
V(BR)DSS 30V
RDS(ON)
8.5mΩ @ VGS = 10V 10.5mΩ @ VGS = 4.5V
ID T.
DMN3010LK3 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
FEATURES ·Drain Current –ID= 43A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 30V(Min) ·Static Drain-Source On-Resistance
:.
DMN3010LK3 - N-Channel MOSFET
(Diodes)
DMN3010LK3
Green N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 30V
RDS(ON)
9.5mΩ @ VGS = 10V 11.5mΩ @ VGS = 4.5V
ID TC = +25°C
43A
39.
DMN3010LSS - Single N-channel MOSFET
(Diodes Incorporated)
NEW PRODUCT
Features
• Low On-Resistance • 9mΩ @ VGS = 10V • 13mΩ @ VGS = 4.5V
• Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching .
DMN3011LSS - 30V N-CHANNEL MOSFET
(DIODES)
DMN3011LSS
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 30V
RDS(ON) Max 10mΩ @ VGS = 10V 16mΩ @ VGS = 4.5V
ID Max (Note 5) TA = +25.
