* Low RDS(ON)
* ensures on state losses are minimized
* Small form factor thermally efficient package enables higher density end products
* Occupies just 33% of the board area occupied by SO-8 enabling smaller end product
* 100% UIS (Avalanche) rated
DMN3029LFG Datasheet (189.16 KB)
DMN3029LFG
189.16 KB
N-channel mosfet.
ADVANCE INNEFWORPRMOADTIUOCNT
DMN3029LFG
Green
N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI®
Product Summary
V(BR)DSS 30V
RDS(ON) 18.6mΩ @ VGS = 10V .
📁 Related Datasheet
DMN3020LK3 - MOSFET
(Diodes)
A Product Line of Diodes Incorporated
..
DMN3020LK3
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Please click here to visit our online spic.
DMN3020UFDF - 30V N-Channel MOSFET
(Diodes)
Product Summary
BVDSS 30V
RDS(ON) Max
19mΩ @ VGS = 4.5V 25mΩ @ VGS = 2.5V 40mΩ @ VGS = 1.8V 120mΩ @ VGS = 1.5V
ID Max TC = +25°C
15A 14A 10A 6A
De.
DMN3020UFDFQ - 30V N-CHANNEL MOSFET
(DIODES)
Product Summary
BVDSS 30V
RDS(ON) Max
19mΩ @ VGS = 4.5V 25mΩ @ VGS = 2.5V 40mΩ @ VGS = 1.8V 120mΩ @ VGS = 1.5V
ID Max TC = +25°C
15A 14A 10A 6A
De.
DMN3020UTS - N-CHANNEL MOSFET
(DIODES)
DMN3020UTS
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 30V
RDS(ON) max
20mΩ @ VGS = 4.5V 25mΩ @ VGS = 2.5V
ID max TC = +25°C
15A 14A
.
DMN3021LFDF - N-CHANNEL MOSFET
(Diodes)
Product Summary
BVDSS 30V
RDS(ON) Max
15mΩ @ VGS = 10V 20mΩ @ VGS = 4.5V
ID Max TA = +25°C
9.3A 8.1A
DMN3021LFDF
30V N-CHANNEL ENHANCEMENT MODE MO.
DMN3023L - N-Channel MOSFET
(Diodes)
ADVANCED INNEFWORPRMOATDIUOCNT
Product Summary
V(BR)DSS 30V
RDS(ON) 25mΩ @ VGS = 10V 28mΩ @ VGS = 4.5V
ID TA = +25°C
6.2A
5.8A
Description and Ap.
DMN3024LK3 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
FEATURES ·Drain Current –ID= 14.4A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 30V(Min) ·Static Drain-Source On-Resistance.
DMN3024LK3 - MOSFET
(Diodes)
A Product Line of Diodes Incorporated
..
DMN3024LK3
30V TO252 (DPAK) N-CHANNEL ENHANCEMENT MODE MOSFET
Please click here to visit ou.
