FCX491A
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Npn silicon planar medium power transistor.
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FCX491 - NPN MEDIUM POWER TRANSISTOR
(Diodes)
Features
BVCEO > 60V IC = 1A Continuous Collector Current ICM = 2A Peak Pulse Current RCE(sat) = 195mΩ for a Low Equivalent On-Resistance hF.
FCX493 - 100V NPN MEDIUM POWER TRANSISTOR
(Diodes)
Features
• BVCEO > 100V • IC = 1A High Continuous Current • Low Saturation Voltage VCE(sat) < 300mV @ 250mA • Complementary PNP Type: FCX593 • Totally.
FCX493A - NPN MEDIUM POWER HIGH GAIN TRANSISTOR
(Diodes)
A Product Line of Diodes Incorporated
FCX493A
60V NPN MEDIUM POWER HIGH GAIN TRANSISTOR IN SOT89
Features
• BVCEO > 60V • IC = 1A high Continuous Col.
FCX493Q - 100V NPN POWER TRANSISTOR
(DIODES)
FCX493Q
100V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT89
Description
This Bipolar Junction Transistor (BJT) is designed to meet the stringent.
FCX495 - 150V NPN HIGH-VOLTAGE TRANSISTOR
(Diodes)
Features
• BVCEO > 150V • IC = 1A High Continuous Current • Low Saturation Voltage VCE(sat) < 300mV @ 0.5A • Totally Lead-Free & Fully RoHS Compliant .
FCX458 - NPN Silicon Planar High Voltage Transistor
(Kexin)
SMD Type
Transistors
NPN Silicon Planar High Voltage Transistor FCX458
Features
400 Volt VCEO Ptot= 1 Watt
Absolute Maximum Ratings Ta = 25
Parame.
FCX458 - NPN HIGH VOLTAGE TRANSISTOR
(Diodes)
Features
BVCEO > 400V IC = 225mA Continuous Collector Current ICM = 500mA Peak Pulse Current Excellent hFE Characteristics up to 100mA Low s.
FCX1047A - 10V NPN MEDIUM POWER TRANSISTOR
(Diodes)
A Product Line of Diodes Incorporated
Green
FCX1047A
10V NPN MEDIUM POWER TRANSISTOR IN SOT89
Features
• BVCEO > 10V • IC = 4A High Continuous Curren.
FCX1051A - NPN SILICON POWER TRANSISTOR
(Zetex Semiconductors)
SOT89 NPN SILICON POWER (SWITCHING) TRANSISTOR
ISSSUE 1 - DECEMBER 1998 FEATURES
FCX1051A
C
*
* * * *
2W POWER DISSIPATION
10A Peak Pulse Current E.
FCX1051A - 40V NPN MEDIUM POWER TRANSISTOR
(DIODES)
FCX1051A
40V NPN MEDIUM POWER TRANSISTOR IN SOT89
Features
• BVCEO > 40V • IC = 3.0A Continuous Current • Low Saturation Voltage VCE(sat) < 25mV @ 20.