Guard Ring Die Construction for Transient Protection Low Forward Voltage Drop For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity
✔ PDS835L Application
High Forward Surge Current Capability Lead Free Finish, RoHS Compliant (Note 1) "Green" Molding Compound (No
PDS8966A, Potens semiconductor
80V N-Channel MOSFETs
PDS8966A
General Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology..
PDS-721, ICP DAS
Programmable Device Servers
3
Programmable Device Servers (Serial-to-Ethernet)
RS-232/RS-485 Features
Incorporate Serial Devices in an Ethernet netw.
PDS04N15, Potens semiconductor
150V N-Channel MOSFETs
General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This adva.
PDS0744, Potens semiconductor
100V N+P Dual Channel MOSFETs
PDS0744
General Description
These N+P dual Channel enhancement mode power field effect transistors are using trench DM.
PDS0960, Potens semiconductor
100V N-Channel MOSFETs
PDS0960
General Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology..
PDS0966, Potens semiconductor
100V N-Channel MOSFETs
PDS0966
General Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology..
PDS0976, Potens semiconductor
100V N-Channel MOSFETs
PDS0976
General Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology..
PDS0978, Potens semiconductor
100V N-Channel MOSFETs
PDS0978
General Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology..
