PDS0976 Datasheet - Potens semiconductor

PDS0976 N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

PDS0976 Features

* 100V,12A, RDS(ON) =9.2mΩ@VGS = 10V

* Improved dv/dt capability

* Fast switching

* 100% EAS Guaranteed

* Green Device Available Applications

* Networking

* Load Switch

* LED applications

* Quick Charger Absolute Maximum Ratings Tc=25℃ unless otherwise noted Sym

PDS0976-Potenssemiconductor.pdf

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Datasheet Details

Part number:

PDS0976

Manufacturer:

Potens semiconductor

File Size:

706.44 KB

Description:

N-channel mosfet.

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PDS0976 PDS0976 N-Channel MOSFET Potens semiconductor

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