PDS0976 - N-Channel MOSFET
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
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PDS0976 Features
* 100V,12A, RDS(ON) =9.2mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available Applications
* Networking
* Load Switch
* LED applications
* Quick Charger Absolute Maximum Ratings Tc=25℃ unless otherwise noted Sym
