PDS2305 Datasheet - Potens semiconductor

PDS2305 P-Channel MOSFETs

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

PDS2305 Features

* -20V,-11A, RDS(ON) =16mΩ@VGS = -4.5V

* Improved dv/dt capability

* Fast switching

* Green Device Available

* Suit for -1.8V Gate Drive Applications Applications

* Notebook

* Load Switch

* Networking Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS

PDS2305-Potenssemiconductor.pdf

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Datasheet Details

Part number:

PDS2305

Manufacturer:

Potens semiconductor

File Size:

571.71 KB

Description:

P-channel mosfets.

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