PDS2603 Datasheet - Potens semiconductor

PDS2603 P-Channel MOSFETs

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

PDS2603 Features

* -20V,-14A, RDS(ON) =8.5mΩ@VGS = -4.5V

* Improved dv/dt capability

* Fast switching

* Green Device Available

* Suit for -1.8V Gate Drive Applications Applications

* Notebook

* Load Switch

* Networking

* Hand-Held Instruments Absolute Maximum Ratings Tc=25℃ unles

PDS2603-Potenssemiconductor.pdf

PDS2603 Datasheet Preview — Preview of PDS2603 PDF

Datasheet Details

Part number:

PDS2603

Manufacturer:

Potens semiconductor

File Size:

471.11 KB

Description:

P-channel mosfets.

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PDS2603 PDS2603 P-Channel MOSFETs Potens semiconductor

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