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PDS04N15 Datasheet - Potens semiconductor

PDS04N15 N-Channel MOSFETs

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

PDS04N15 Features

* 150V,4A, RDS(ON) =65mΩ@VGS = 10V

* Improved dv/dt capability

* Fast switching

* Green Device Available Applications

* Networking

* Load Switch

* LED applications Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-

PDS04N15-Potenssemiconductor.pdf

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Datasheet Details

Part number:

PDS04N15

Manufacturer:

Potens semiconductor

File Size:

462.96 KB

Description:

N-channel mosfets.

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PDS04N15 PDS04N15 N-Channel MOSFETs Potens semiconductor

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