PDS8966A N-Channel MOSFET

Potens semiconductor

Description

80V N-Channel MOSFETs PDS8966A General .
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

Datasheet Specifications

Features

* 80V,19A, RDS(ON) =13mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed

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