PDS8966A Datasheet - Potens semiconductor

N-Channel MOSFET

PDS8966A Features

* 80V,19A, RDS(ON) =13mΩ@VGS = 10V

* Improved dv/dt capability

* Fast switching

* 100% EAS Guaranteed

* Green Device Available Applications

* Networking

* Load Switch

* LED applications Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM EAS

PDS8966A General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

PDS8966A Datasheet (690.73 KB)

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Datasheet Details

Part number:

PDS8966A

Manufacturer:

Potens semiconductor

File Size:

690.73 KB

Description:

N-channel mosfet.

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PDS8966A N-Channel MOSFET Potens semiconductor

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PDS8966A Features

PDS8966A General Description

Datasheet Details

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