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PDS8966A N-Channel MOSFET

Potens semiconductor

PDS8966A Description

80V N-Channel MOSFETs PDS8966A General .
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

PDS8966A Features

* 80V,19A, RDS(ON) =13mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed

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Datasheet Details

Part number: PDS8966A
Manufacturer: Potens semiconductor
File Size: 690.73 KB
Datasheet: PDS8966A-Potenssemiconductor.pdf
Description: N-Channel MOSFET

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N-Channel MOSFET Potens semiconductor

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