DIM250PHM33-TL000 Datasheet - Dynex

Half Bridge IGBT

* Low VCE(sat) Device

* 10µs Short Circuit Withstand

* High Thermal Cycling Capability

* High Current Density Enhanced DMOS SPT

* Isolated AlSiC Base with AlN Substrates KEY PARAMETERS VCES VCE(sat)

* (typ) IC (max) IC(PK) (max) 3300V 2.0V 250A 500A

* Measured at the

DIM250PHM33-TL000

Dynex

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Half bridge igbt.

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DIM250PHM33-TL000 Half Bridge IGBT Dynex

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