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DIM200MHS17-A000
DIM200MHS17-A000
Half Bridge IGBT Module
Replaces issue March 2002, version DS5459-4.0 DS5459-5.1 June 2002
FEATURES
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10µs Short Circuit Withstand Non Punch Through Silicon Isolated Copper Base Plate
KEY PARAMETERS VCES (typ) VCE(sat) * (max) IC (max) IC(PK)
1700V 2.7V 200A 400A
*(measured at the power busbars and not the auxiliary terminals)
APPLICATIONS
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Inverters Motor Controllers
11(C2) 6(G2) 7(E2) 3(C1)
The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 600V to 3300V and currents up to 2400A. The DIM200MHS17-A000 is a half bridge 1700V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module.
DIM200MHS17-A000 Datasheet
