DIM250KHM33-TS001 Datasheet - Dynex

Half Bridge IGBT Module

* 10µs Short Circuit Withstand

* High Thermal Cycling Capability

* High Current Density Enhanced DMOS SPT

* Isolated AlSiC Base with AlN Substrates

* Lead Free Construction KEY PARAMETERS VCES VCE(sat)

* (typ) IC (max) IC(PK) (max) 3300V 2.2V 250A 5

DIM250KHM33-TS001

Dynex

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Half bridge igbt module.

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DIM250KHM33-TS001 Half Bridge IGBT Module Dynex

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