* s s s s 10µs Short Circuit Withstand High Thermal Cycling Capability Non Punch Through Silicon Isolated MMC Base with AlN Substrates KEY PARAMETERS VCES (typ) VCE(sat)
* (max) IC (max) IC(PK) 1700V 2.7V 800A 1600A
* (measured at the power busbars and not the auxiliary terminals) APPLICAT
DIM800FSM17-A000 Datasheet (172.72 KB)
DIM800FSM17-A000
Dynex
172.72 KB
Single switch igbt module preliminary information.
DIM800FSM17-A000 www.DataSheet4U.com DIM800FSM17-A000 Single Switch IGBT Module Preliminary Information Replaces May 2001, version DS5461-1.0 DS5461-.
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