DIM800DDS12-A000 Datasheet - Dynex Semiconductor

DIM800DDS12-A000, Dual Switch IGBT Module

11.5 ±0.2 14 ±0.2 Replaces DS5540-3 DIM800DDS12-A000 Dual Switch IGBT Module DS5540-4 July 2014 (LN31759) 6 ±0.2 .

Features

* 1
* 8 ±100.µ2s Short Circuit Withstand
* Non4P4un±c0h.2Through Silicon
* Isolated 5C7u B±a0s.2e with Al2O3 Substrates
* Lead Free construction KEY PARAMETERS 6 x O7 VCES VCE(sat)
* (typ) IC (max) IC(PK) (max) 28 ±0.5 1200V 2s.2crVewing depth 8m00aAx 8 1600A
* Measured a

Applications

* requiring high thermal cycling capability. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. 1(E) 5(E) 6(G) 7(C) 3(C) 2(C) 12(C) 11(G) 4(E) 10(E) Fig. 1

DIM800DDS12-A000_DynexSemiconductor.pdf