DIM800DDS12-A000 Datasheet - Dynex Semiconductor

Dual Switch IGBT Module

* 1

* 8 ±100.µ2s Short Circuit Withstand

* Non4P4un±c0h.2Through Silicon

* Isolated 5C7u B±a0s.2e with Al2O3 Substrates

* Lead Free construction KEY PARAMETERS 6 x O7 VCES VCE(sat)

* (typ) IC (max) IC(PK) (max) 28 ±0.5 1200V 2s.2crVewing depth 8m00aAx 8 1600A

* Measured a

DIM800DDS12-A000

Dynex Semiconductor

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Dual switch igbt module.

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