NTD50
EDI
64.84 KB
High voltage-high current silicon rectifiers.
NTD
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS
DIFFUSED SILICON JUNCTIONS PRV 8,000 TO 60,000 VOLTS AVALANCHE CHARACTERISTICS LOW LEAKAGE
Peak EDI.
📁 Related Datasheet
NTD50N03R - Power MOSFET
(ON Semiconductor)
NTD50N03R Power MOSFET
25 V, 45 A, Single N−Channel, DPAK
Features
• • • • •
Planar Technology Low RDS(on) to Minimize Conduction Losses Low Capacit.
NTD5406N - Power MOSFET
(ON Semiconductor)
.
NTD5407N - Power MOSFET
(ON Semiconductor)
NTD5407N Power MOSFET
40 V, 38 A, Single N−Channel, DPAK
Features
..
• • • •
Low RDS(on) High Current Capability Low Gate Charge T.
NTD5413N - Power MOSFET
(ON Semiconductor)
NTD5413N
Power MOSFET
30 Amps, 60 Volts Single N−Channel DPAK
Features
• Low RDS(on) • High Current Capability • Avalanche Energy Specified • These a.
NTD5414N - Power MOSFET
(ON Semiconductor)
NTD5414N, NVD5414N
Power MOSFET
24 A, 60 V Single N−Channel DPAK
Features
• Low RDS(on) • High Current Capability • Avalanche Energy Specified • NVD.
NTD57A - Thyristor/Diode Module
(Naina Semiconductor)
Naina Semiconductor Ltd.
NTD57A
Features
Thyristor/Diode Module, 50A
• Improved glass passivation for high reliability • Exceptional stability at .
NTD5802N - Power MOSFET
(ON Semiconductor)
NTD5802N Power MOSFET
Features
40 V, Single N−Channel, 101 A DPAK
• • • • • • •
Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize.
NTD5803N - Power MOSFET
(ON Semiconductor)
NTD5803N
Power MOSFET
40 V, 76 A, Single N−Channel, DPAK/IPAK
Features
• Low RDS(on) • High Current Capability • Avalanche Energy Specified • These a.
