Part number:
DR202
Manufacturer:
EIC discrete Semiconductors
File Size:
70.51 KB
Description:
(dr200 - dr210) silicon rectifier diodes.
* :
* High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Pb / RoHS Free SILICON RECTIFIER DIODES D2 0.161 (4.10) 0.154 (3.90) 1.00 (25.4) MIN. 0.284 (7.20) 0.268 (6.84) MECHANICAL DATA :
* Case :
DR202
EIC discrete Semiconductors
70.51 KB
(dr200 - dr210) silicon rectifier diodes.
📁 Related Datasheet
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Token coaxial resonators (DR) are the cornerstone of RF microwave munications.
Features : High quality factor.
High di.
DR200 - (DR200 - DR210) SILICON RECTIFIER DIODES
(EIC discrete Semiconductors)
..
DR200 - DR210
PRV : 50 - 1000 Volts Io : 2.0 Amperes
FEATURES :
* * * * * * High current capability High surge current capability.
DR200G - (DR200G - DR210G) GLASS PASSIVATED JUNCTION SILICON RECTIFIERS
(EIC discrete Semiconductors)
..
DR200G - DR210G
PRV : 50 - 1000 Volts Io : 2.0 Amperes
FEATURES :
* * * * * Glass passivated chip High current capability High re.
DR201 - (DR200 - DR210) SILICON RECTIFIER DIODES
(EIC discrete Semiconductors)
..
DR200 - DR210
PRV : 50 - 1000 Volts Io : 2.0 Amperes
FEATURES :
* * * * * * High current capability High surge current capability.
DR201G - (DR200G - DR210G) GLASS PASSIVATED JUNCTION SILICON RECTIFIERS
(EIC discrete Semiconductors)
..
DR200G - DR210G
PRV : 50 - 1000 Volts Io : 2.0 Amperes
FEATURES :
* * * * * Glass passivated chip High current capability High re.
DR202G - (DR200G - DR210G) GLASS PASSIVATED JUNCTION SILICON RECTIFIERS
(EIC discrete Semiconductors)
..
DR200G - DR210G
PRV : 50 - 1000 Volts Io : 2.0 Amperes
FEATURES :
* * * * * Glass passivated chip High current capability High re.
DR204 - (DR200 - DR210) SILICON RECTIFIER DIODES
(EIC discrete Semiconductors)
..
DR200 - DR210
PRV : 50 - 1000 Volts Io : 2.0 Amperes
FEATURES :
* * * * * * High current capability High surge current capability.
DR204G - (DR200G - DR210G) GLASS PASSIVATED JUNCTION SILICON RECTIFIERS
(EIC discrete Semiconductors)
..
DR200G - DR210G
PRV : 50 - 1000 Volts Io : 2.0 Amperes
FEATURES :
* * * * * Glass passivated chip High current capability High re.
