Datasheet4U Logo Datasheet4U.com

RM10B FAST RECOVERY DIODE MODULE

RM10B Description

RM10 - RM10Z PRV : 200 - 800 Volts Io : 1.2 - 1.5 Amperes .

RM10B Features

* :
* High current capability High surge current capability High reliability Low reverse current Low forward voltage drop SILICON RECTIFIER DIODES D2 0.161 (4.10) 0.154 (3.90) 1.00 (25.4) MIN. 0.284 (7.20) 0.268 (6.84) MECHANICAL DATA :
* Case : D2 Molded plastic

📥 Download Datasheet

Preview of RM10B PDF
datasheet Preview Page 2

Datasheet Details

Part number
RM10B
Manufacturer
EIC discrete Semiconductors
File Size
69.87 KB
Datasheet
RM10B_EICdiscreteSemiconductors.pdf
Description
FAST RECOVERY DIODE MODULE

📁 Related Datasheet

  • RM10 - POWER TRANSFORMER MODULES (FPE)
  • RM100C1A-XXF - FAST RECOVERY DIODE MODULE (Mitsubishi Electric Semiconductor)
  • RM100CA-XXF - FAST RECOVERY DIODE MODULE (Mitsubishi Electric Semiconductor)
  • RM100CZ-24 - FAST RECOVERY DIODE MODULE (Mitsubishi Electric Semiconductor)
  • RM100CZ-2H - FAST RECOVERY DIODE MODULE (Mitsubishi Electric Semiconductor)
  • RM100CZ-H - FAST RECOVERY DIODE MODULE (Mitsubishi Electric Semiconductor)
  • RM100CZ-M - FAST RECOVERY DIODE MODULE (Mitsubishi Electric Semiconductor)
  • RM100D2Z-40 - FAST RECOVERY DIODE MODULE (Mitsubishi Electric Semiconductor)

📌 All Tags

EIC discrete Semiconductors RM10B-like datasheet