2N5219 Datasheet - ETC

2N5219 NPN SILICON ANNULAR TRANSISTOR

2N5219 (SILICON) NPN SILICON ANNULAR TRANSISTOR .. designed for general-purpose amplifier applications. Low Collector-Emitter Saturation Voltage VCE(sat): 0.4 Vdc (Max) @ IC: 10 mAde High Current-Gain-Bandwidth Product fT: 150 MHz (Min) @ IC: 10 mAde Low Collector-Base Capacitance Ccb: 4.0 pF (Max)@ VCE: 10 Vdc NPN SILICON AMPLIFIER TRANSISTOR MAXIMUM RATINGS Rating Coliector~Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Callector Current.

2N5219-ETC.pdf