2N5222 Datasheet - ETC

2N5222 NPN SILICON ANNULAR TRANSISTOR

2N5222 (SILICON) NPN SILICON ANNULAR TRANSISTOR designed for RF amplifier, mixer, and video IF applications. High Current Gain-Bandwidth Product fT = 450 MHz (Min) @ IC = 4.0 mAde Coliector Emitter Saturation VoltageVCE = 1.0 Vdc (Max) @ IC = 4.0 mAde Low Collector Base Capacitance Ccb= 1.3pF (Max)@VCB=10Vdc NPN SILICON AMPLIFIER TRANSISTOR MAXIMUM RATINGS Rating Coilector Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collect.

2N5222-ETC.pdf