2N5226 Datasheet - ETC

2N5226 PNP SILICON ANNULAR TRANSISTOR

2N5226 (SILICON) PNP SILICON ANNULAR TRANSISTOR designed for general purpose amplifier applications and for complementary circuitry with the 2N5225. Collector Emitter Breakdown Voltage - BVCEO = 25 Volts (Min) @ IC = 10 mAdc Current Gain Specified at lOrnA and 50 rnA Coli ector Base Capacitance - Ccb = 20 pF (Max) @ VCB = 5.0 Vdc PNP SILICON AMPLIFIER TRANSISTOR 'MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage EmItter-Base Voltag.

2N5226-ETC.pdf