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2N5797 SILICON P-CHANNEL JUNCTION FET

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Description

2N5797 (SILICON) thru 2N5800 SILICON P *CHANNEL JUNCTION FIELD *EFFECT TRANSISTORS Symmetrical depletion mode Junction Field *Effect Transis.

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Datasheet Specifications

Part number
2N5797
Manufacturer
ETC
File Size
211.54 KB
Datasheet
2N5797-ETC.pdf
Description
SILICON P-CHANNEL JUNCTION FET

Applications

* Low Reverse Transfer Capacitance Crss = 1.0 pF (Maxi
* Drain and Source Interchangeable
* Low Gate Reverse Current - IGSS = 1.0 nAdc (Maxi
* Unibloc Plastic Package Encapsulation P
* CHANNEL JUNCTION FIELD
* EFFECT TRANSISTORS
* MAXIMUM RATINGS Rating Drai

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ETC 2N5797-like datasheet