2N5798, 2N5797 SILICON P-CHANNEL JUNCTION FET

Description

2N5797 (SILICON) thru 2N5800 SILICON P *CHANNEL JUNCTION FIELD *EFFECT TRANSISTORS Symmetrical depletion mode Junction Field *Effect Transis.

📥 Download Datasheet

2N5798 Datasheet Preview — This datasheet PDF includes multiple part numbers: 2N5798, 2N5797. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: 2N5798, 2N5797
Manufacturer: ETC
File Size: 211.54 KB
Datasheet: 2N5797-ETC.pdf
Description: SILICON P-CHANNEL JUNCTION FET
Note: This datasheet PDF includes multiple part numbers: 2N5798, 2N5797.
Please refer to the document for exact specifications by model.

Applications

* Low Reverse Transfer Capacitance Crss = 1.0 pF (Maxi
* Drain and Source Interchangeable
* Low Gate Reverse Current - IGSS = 1.0 nAdc (Maxi
* Unibloc Plastic Package Encapsulation P
* CHANNEL JUNCTION FIELD
* EFFECT TRANSISTORS
* MAXIMUM RATINGS Rating Drai

2N5798 Distributors

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2N5797 SILICON P-CHANNEL JUNCTION FET ETC

ETC 2N5798-like datasheet