3N169 MOS FIELD-EFFECT TRANSISTORS

Description

3N169 (SILICON) 3N170 3N171 I I SILICON N-CHANNEL MOS FIELD-EFFECT TRANSISTORS Enhancement Mode transistors designed for low-power switching applic.

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Datasheet Specifications

Part number: 3N169
Manufacturer: ETC
File Size: 342.80 KB
Datasheet: 3N169-ETC.pdf
Description: MOS FIELD-EFFECT TRANSISTORS

Applications

* I
* Low Switching Voltages - VGS(th)';; 3.0 Vdc
* Fast Switching Times . - tr';; 10 ns I
* Low Drain-Source Resistance rds(on) = 200 Ohms (Max) i
* Low Reverse Transfer Car;acitance Crss = 1.3 pF (Max) I . . Ma"ufdctur~

3N169 Distributors

📁 Related Datasheet

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3N169 MOS FIELD-EFFECT TRANSISTORS ETC

ETC 3N169-like datasheet