3N169 Datasheet - ETC

3N169 MOS FIELD-EFFECT TRANSISTORS

3N169 (SILICON) 3N170 3N171 I I SILICON N-CHANNEL MOS FIELD-EFFECT TRANSISTORS Enhancement Mode transistors designed for low-power switching applications. I Low Switching Voltages - VGS(th)';; 3.0 Vdc Fast Switching Times .- tr';; 10 ns I Low Drain-Source Resistance rds(on) = 200 Ohms (Max) i Low Reverse Transfer Car;acitance Crss = 1.3 pF (Max) I .. Ma"ufdctur~

3N169 Datasheet (342.80 KB)

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Datasheet Details

Part number:

3N169

Manufacturer:

ETC

File Size:

342.80 KB

Description:

Mos field-effect transistors.

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3N169 MOS FIELD-EFFECT TRANSISTORS ETC

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