Excelics DATA SHEET +29.5dBm TYPICAL OUTPUT POWER 9.5dB TYPICAL POWER GAIN AT 18GHz 0.3 X 1200 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY Idss SORTED IN 30mA PER BIN RANGE 830 50 116 D D D EPA120E High Efficiency Heterojunction Power FET D 48 320 40 S G S G S G S G S 100 95 45 80 Chip Thickness: 75 ± 13 microns All
Datasheet Details
Part number:
EPA120E
Manufacturer:
ETC
File Size:
42.04 KB
Description:
High efficiency heterojunction power fet.