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EPA120E Datasheet - ETC

EPA120E High Efficiency Heterojunction Power FET

Excelics DATA SHEET +29.5dBm TYPICAL OUTPUT POWER 9.5dB TYPICAL POWER GAIN AT 18GHz 0.3 X 1200 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY Idss SORTED IN 30mA PER BIN RANGE 830 50 116 D D D EPA120E High Efficiency Heterojunction Power FET D 48 320 40 S G S G S G S G S 100 95 45 80 Chip Thickness: 75 ± 13 microns All .

EPA120E_ETC.pdf

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Datasheet Details

Part number:

EPA120E

Manufacturer:

ETC

File Size:

42.04 KB

Description:

High efficiency heterojunction power fet.

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EPA120E EPA120E High Efficiency Heterojunction Power FET ETC

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