PJ2N9014

Part number:

PJ2N9014

Manufacturer:

ETC

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📄 Download PJ2N9014 Datasheet PDF

Description:

Npn epitaxial silicon transistor.
www.DataSheet4U.com PJ2N9014 NPN Epitaxial Silicon Transistor PRE-APLIFIER, LOW LEVEL&LOW NOISE *.
* High total power dissipation (PT=450mW) High hFE and good linearity Complementary to PJ2N9015 T.

PJ2N9012 Datasheet PDF

PJ2N9012, Promax Johnton
.. PJ2N9012 PNP Epitaxial Silicon Transistor 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION TO-92 SOT-23 •.

PJ2N9013 Datasheet PDF

PJ2N9013, Promax Johnton
.. PJ2N9013 NPN Epitaxial Silicon Transistor 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLAS S B PUS H-PULL OPERATION • • • • High tot.

PJ2N9015 Datasheet PDF

PJ2N9015, Promax Johnton
.. PJ2N9015 PNP Epitaxial Silicon Transistor PRE-APLIFIER, LOW LEVEL&LOW NOISE • • • High total power dissipation (PT=450mW) High hF.

PJ2N3904 Datasheet PDF

PJ2N3904, Promax Johnton
.. PJ2N3904 NPN Epitaxial Silicon Transistor GENERAL PURPO SE TRANSISTO R • TO-92 SOT-23 • Collector-Emitter Voltage: VCEO = 40V.

PJ2N3906 Datasheet PDF

PJ2N3906, Promax Johnton
.. PJ2N3906 PNP Epitaxial Silicon Transistor GENERAL PURPO SE TRANSISTO R • • Collector-Emitter Voltage: VCEO = 40V Collector Diss.

PJ20C40 Datasheet PDF

PJ20C40, Promax Johnton
.. PJ20C40 20 AMP SCHOTTKY BARRIER RECTIFIER FEATURES • • • • • • Metal of silicon rectifier, majority carrier conduction Low power.

PJ2301 Datasheet PDF

PJ2301, Pan Jit International
PJ2301 20V P-Channel Enhancement Mode MOSFET FEATURES • R, DS(ON) VGS@-1.8V,ID@-1.5A=200mΩ • RDS(ON), VGS@-4.5V,ID@-2.2A=105mΩ • Advanced Trenc.

PJ2306 Datasheet PDF

PJ2306, Pan Jit International
PJ2306 30V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS(ON), VGS@10V,IDS@3.2A=65mΩ • RDS(ON), VGS@4.5V,IDS@2.8A=85mΩ • Advanced Tr.

NPN Epitaxial Silicon Transistor

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