EM6156K1600V Datasheet - Eorex Corporation

EM6156K1600V 256K x 16 LP SRAM

The EM6156K600V is a 4,194,304-bit low power CMOS static random access memory organized as 262,144 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The EM6156K600V is well design.

EM6156K1600V Features

* z z Fast access time: 45/55/70ns Low power consumption: Operating current: 40/30/20mA (TYP.) Standby current: -L/-LL version 20/2µA (TYP.) Single 2.7V ~ 3.6V power supply All inputs and outputs TTL compatible Fully static operation z z z z Tri-state output Data byte control : LB# (DQ0 ~ DQ7) UB# (DQ

EM6156K1600V_EorexCorporation.pdf