FLL2400IU-2C Datasheet, Fet, Eudyna Devices

FLL2400IU-2C Features

• Fet
• Push-Pull Configuration High Power Output: 240W (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The

PDF File Details

Part number:

FLL2400IU-2C

Manufacturer:

Eudyna Devices

File Size:

162.35kb

Download:

📄 Datasheet

Description:

High power gaas fet. The FLL2400IU-2C is a 240 Watt GaAs FET that employs a push-pull design that offers ease of matching, greater consistency and a broad

FLL2400IU-2C Application

• Applications
• Solid State Base-Station Power Amplifier.
• W-CDMA and IMT 2000 Communication Systems. ABSOLUTE MAXIMUM RATINGS (Amb

TAGS

FLL2400IU-2C

Eudyna Devices

📁 Related Datasheet

FLL200 - The Relationship for Open Circuit Voltage and Residual Capacity (FAAM)
FLL200 Dimensions The Relationship for Open Circuit Voltage and Residual Capacity (25℃) Charging Characteristics(25℃) Specifications Nominal Voltage .

FLL200IB-1 - (FLL200IB-1/-2/-3) L-Band Medium & High Power GaAs FET (Eudyna Devices)
FLL200IB-1, FLL200IB-2, FLL200IB-3 L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 42.5dBm (Typ.) High Gain: G1dB = 1.

FLL200IB-2 - (FLL200IB-1/-2/-3) L-Band Medium & High Power GaAs FET (Eudyna Devices)
FLL200IB-1, FLL200IB-2, FLL200IB-3 L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 42.5dBm (Typ.) High Gain: G1dB = 1.

FLL200IB-3 - (FLL200IB-1/-2/-3) L-Band Medium & High Power GaAs FET (Eudyna Devices)
FLL200IB-1, FLL200IB-2, FLL200IB-3 L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 42.5dBm (Typ.) High Gain: G1dB = 1.

FLL21E004ME - High Voltage - High Power GaAs FET (Eudyna Devices)
FLL21E004ME FEATURES ・High Voltage Operation : VDS=28V ・High Power : P1dB=36dBm(typ.) at f=2.17GHz ・High Gain: G1dB=14dB(typ.) at f=2.17GHz ・Broad Fre.

FLL21E010MK - High Voltage - High Power GaAs FET (Eudyna Devices)
FLL21E010MK FEATURES High Voltage - High Power GaAs FET ・High Voltage Operation : VDS=28V ・High Power : P1dB=40dBm(typ.) at f=2.17GHz ・High Gain: G1.

FLL21E040IK - High Voltage - High Power GaAs FET (Eudyna Devices)
FLL21E040IK FEATURES High Voltage - High Power GaAs FET ・High Voltage Operation : VDS=28V ・High Gain: 15dB(typ.) at Pout=40dBm(Avg.) ・Broad Frequenc.

FLL21E045IY - High Power GaAs FET (Eudyna Devices)
FLL21E045IY L,S-band High Power GaAs FET FEATURES ・High Voltage Operation (VDS=28V) GaAs FET ・High Gain: 15.5dB(typ.) at Pout=40dBm(Avg.) ・Broad Frequ.

FLL21E060IY - High Power GaAs FET (Eudyna Devices)
FLL21E060IY L,S-band High Power GaAs FET FEATURES ・High Voltage Operation (VDS=28V) GaAs FET ・High Gain: 15.5dB(typ.) at Pout=41.8dBm(Avg.) ・Broad Fre.

FLL21E060IY - High Power GaAs FET (Eudyna Devices)
FLL21E060IY L,S-band High Power GaAs FET FEATURES ・High Voltage Operation (VDS=28V) GaAs FET ・High Gain: 15.5dB(typ.) at Pout=41.8dBm(Avg.) ・Broad Fre.