EIA1818-1P - 18.15-18.75GHz 1W Internally Matched Power FET

Datasheet Summary

Features

HIGH PAE( 25%.

Excelics Semiconductor

📥 Download Datasheet

Datasheet Details

Part number	EIA1818-1P
Manufacturer	Excelics Semiconductor
File Size	49.09 KB
Description	18.15-18.75GHz 1W Internally Matched Power FET
Datasheet	EIA1818-1P Datasheet
Additional preview pages of the EIA1818-1P datasheet.

📁 Similar Datasheet

EIA1111 - High Power Capacitors (S42E Silver Series) Specification (Johanson Technology)
EIA4025 - Proximity Sensors Inductive Thermoplastic Polyester Housing Type (CARLO GAVAZZI)

Other Datasheets by Excelics Semiconductor

EIA1818-2P - 18.15-18.75GHz 2W Internally Matched Power FET
EIA1819-1P - 18.7-19.7GHz 1W Internally Matched Power FET
EIA1819-2P - 18.7-19.7GHz 2W Internally Matched Power FET
EIA1011-2P - 2W Internally Matched Power FET
EIA1011-4P - 10.7-11.7GHz 4W Internally Matched Power FET
EIA1111-2 - 11.0-11.5 GHz 2-Watt Internally Matched Power FET
EIA1111-6 - 11.0-11.5 GHz 6-Watt Internally Matched Power FET
EIA1114-2 - 11.0-14.0 GHz 2-Watt Internally Matched Power FET

Full PDF Text Transcription

Click to expand full text

Excelics • • • • • • 18.15-18.75GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE( 25% TYPICAL) EIB FEATURES HIGH IP3(43dBm TYPICAL) +30.0/+29.5dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB 6.5/5.5dB TYPICAL G1dB POWER GAIN FOR EIA/EIB NON-HERMETIC METAL FLANGE PACKAGE EIA/EIB1818-1P Not recommended for new designs. Contact factory. Effective 03/2003 18.15-18.75GHz, 1W Internally Matched Power FET ELECTRICAL CHARACTERISTICS (Ta = 25 OC) EIA1818-1P SYMBOLS PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f=18.15-18.75GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB) Gain at 1dB Compression f=18.15-18.75GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB) Power Added Efficiency at 1dB compression f=18.15-18.75GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.

Published: Feb 17, 2011 |