EMB16N06G Datasheet (207.80 KB)
EMB16N06G
Excelliance MOS
207.80 KB
Mosfet.
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
60V
D
RDSON (MAX.)
16mΩ
ID
6.7A
G
UIS, Rg 100% Tested
.
📁 Related Datasheet
EMB16N06A N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)
EMB16N06CS MOSFET (Excelliance MOS)
EMB16N06G N-Channel Trench Power MOSFET (Kexin)
EMB16N06H MOSFET (Excelliance MOS)
EMB16N06V MOSFET (Excelliance MOS)
EMB16P04A P-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)
EMB16P04V MOSFET (Excelliance MOS)
EMB10 PNP Digital Transistors (Rohm)
EMB10FHA PNP -100mA -50V Complex Digital Transistors (ROHM)
EMB11 Dual Digital Transistors (Rohm)
