EMB50N10S, Excelliance MOS
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
100V
D
RDSON (MAX.)
50mΩ
ID 8A
G
UIS, Rg .
EMB50P03G, Excelliance MOS
P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
D
BVDSS
‐30V
RDSON (MAX.)
60mΩ
ID
‐6A
G
S Pb‐Free Lead Plati.
EMB50P03J, Excelliance MOS
P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
D
BVDSS
‐30V
RDSON (MAX.)
50mΩ
ID
‐4.5A
G
S Pb‐Free Lead Pla.
EMB50P03JS, Excelliance MOS
P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
D
BVDSS
‐30V
RDSON (MAX.)
50mΩ
ID
‐4.5A
G
S Pb‐Free Lead Pla.
EMB50P03K, Excelliance MOS
P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
D
BVDSS
‐30V
RDSON (MAX.)
50mΩ
ID
‐5A
G
S Pb‐Free Lead Plati.
