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EMD02N60F Datasheet - Excelliance MOS

EMD02N60F MOSFET

N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 600V D RDSON (MAX.) 5.5Ω ID 2A G UIS, 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 3mH, ID=2A, RG=25Ω L = 0.5mH Power Dissipation TC =.

EMD02N60F Datasheet (172.07 KB)

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Datasheet Details

Part number:

EMD02N60F

Manufacturer:

Excelliance MOS

File Size:

172.07 KB

Description:

Mosfet.

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