Datasheet4U Logo Datasheet4U.com

EMD02N60F Datasheet - Excelliance MOS

EMD02N60F MOSFET

N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 600V D RDSON (MAX.) 5.5Ω ID 2A G UIS, 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 3mH, ID=2A, RG=25Ω L = 0.5mH Power Dissipation TC =.

EMD02N60F Datasheet

Preview of EMD02N60F PDF
EMD02N60F Datasheet Preview Page 2 EMD02N60F Datasheet Preview Page 3

Datasheet Details

Part number:

EMD02N60F

Manufacturer:

Excelliance MOS

File Size:

172.07 KB

Description:

Mosfet.

📁 Related Datasheet

EMD02N60A MOSFET (Excelliance MOS)

EMD02N60AK MOSFET (Excelliance MOS)

EMD02N60CS MOSFET (Excelliance MOS)

EMD02N60CSK MOSFET (Excelliance MOS)

EMD02N06E MOSFET (Excelliance MOS)

EMD02N06TL8 Single N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

EMD02N10TL8 Single N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

EMD02N70CS MOSFET (Excelliance MOS)

TAGS

EMD02N60F MOSFET Excelliance MOS

EMD02N60F Distributor