EMD03N06E
Excelliance MOS
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EMD03N06ES - MOSFET
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
60V
D
RDSON (MAX.)
4.0mΩ
ID
150A
G
UIS, .
EMD03N06FS - MOSFET
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
60V
D
RDSON (MAX.)
4.1mΩ
ID 90A G
UIS, Rg .
EMD03N06HS - N-Channel Logic Level Enhancement Mode Field Effect Transistor
(Excelliance MOS)
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
60V
RDSON (MAX.)
3mΩ
ID
97A
N Channel MOSFET
UIS, Rg 10.
EMD03N05HS - MOSFET
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
50V
D
RDSON (MAX.)
3.5mΩ
ID 85A G
UIS, Rg .
EMD03N90E - MOSFET
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
900V
D
RDSON (MAX.)
4Ω
ID 3.5A G
UIS, 100%.
EMD03N90F - MOSFET
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
900V
D
RDSON (MAX.)
4Ω
ID 3.5A G
UIS, 100%.
EMD02N06E - MOSFET
(Excelliance MOS)
EMD02N06E
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
60V
D
RDSON (MAX.)
3.1mΩ
ID
191A
G
UIS, Rg .
EMD02N06TL8 - Single N-Channel Logic Level Enhancement Mode Field Effect Transistor
(Excelliance MOS)
EMD02N06TL8
Single N-Channel Logic Level Enhancement Mode Field Effect Transistor
▪Product Summary:
▪ Pin Description:
N-CH
BVDSS
60V
RDSON (MA.
EMD02N10TL8 - Single N-Channel Logic Level Enhancement Mode Field Effect Transistor
(Excelliance MOS)
Single N-Channel Logic Level Enhancement Mode Field Effect Transistor
▪Product Summary:
▪ Pin Description:
N-CH
BVDSS
100V
RDSON (TYP.)@VGS=10V .
EMD02N60A - MOSFET
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
600V
D
RDSON (MAX.)
5.5Ω
ID
2A
G
UIS, 100% Tested
S
.