EMD03N06ES Datasheet, Mosfet, Excelliance MOS

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Part number:

EMD03N06ES

Manufacturer:

Excelliance MOS

File Size:

231.63kb

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📄 Datasheet

Description:

Mosfet.

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EMD03N06ES

Excelliance MOS

📁 Related Datasheet

EMD03N06E - MOSFET (Excelliance MOS)
    N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  60V  D RDSON (MAX.)  3.5mΩ  ID  180A  G   UIS, .

EMD03N06FS - MOSFET (Excelliance MOS)
    N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  60V  D RDSON (MAX.)  4.1mΩ  ID  90A  G   UIS, Rg .

EMD03N06HS - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)
N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V RDSON (MAX.) 3mΩ ID 97A N Channel MOSFET UIS, Rg 10.

EMD03N05HS - MOSFET (Excelliance MOS)
    N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  50V  D RDSON (MAX.)  3.5mΩ  ID  85A  G   UIS, Rg .

EMD03N90E - MOSFET (Excelliance MOS)
    N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  900V  D RDSON (MAX.)  4Ω  ID  3.5A  G   UIS, 100%.

EMD03N90F - MOSFET (Excelliance MOS)
    N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  900V  D RDSON (MAX.)  4Ω  ID  3.5A  G   UIS, 100%.

EMD02N06E - MOSFET (Excelliance MOS)
EMD02N06E N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V D RDSON (MAX.) 3.1mΩ ID 191A G UIS, Rg .

EMD02N06TL8 - Single N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)
EMD02N06TL8 Single N-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪ Pin Description: N-CH BVDSS 60V RDSON (MA.

EMD02N10TL8 - Single N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)
Single N-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪ Pin Description: N-CH BVDSS 100V RDSON (TYP.)@VGS=10V .

EMD02N60A - MOSFET (Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 600V D RDSON (MAX.) 5.5Ω ID 2A G UIS, 100% Tested S .