EMD03N06E - MOSFET
(Excelliance MOS)
EMD03N06E
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
60V
D
RDSON (MAX.)
3.5mΩ
ID
180A
G
UIS, Rg .
EMD03N06ES - MOSFET
(Excelliance MOS)
EMD03N06ES
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
60V
D
RDSON (MAX.)
4.0mΩ
ID
150A
G
UIS, Rg.
EMD03N06FS - MOSFET
(Excelliance MOS)
EMD03N06FS
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
60V
D
RDSON (MAX.)
4.1mΩ
ID
90A
G
UIS, Rg .
EMD03N05HS - MOSFET
(Excelliance MOS)
EMD03N05HS
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
50V
D
RDSON (MAX.)
3.5mΩ
ID
85A
G
UIS, Rg .
EMD03N90E - MOSFET
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
900V
D
RDSON (MAX.)
4Ω
ID
3.5A
G
UIS, 100% Tested
S
.
EMD03N90F - MOSFET
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
900V
D
RDSON (MAX.)
4Ω
ID
3.5A
G
UIS, 100% Tested
S
.
EMD02N06E - MOSFET
(Excelliance MOS)
EMD02N06E
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
60V
D
RDSON (MAX.)
3.1mΩ
ID
191A
G
UIS, Rg .
EMD02N06TL8 - Single N-Channel Logic Level Enhancement Mode Field Effect Transistor
(Excelliance MOS)
EMD02N06TL8
Single N-Channel Logic Level Enhancement Mode Field Effect Transistor
▪Product Summary:
▪ Pin Description:
N-CH
BVDSS
60V
RDSON (MA.