EMD06N06E Datasheet - Excelliance MOS

EMD06N06E MOSFET

N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V D RDSON (MAX.) 6mΩ ID 125A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free EMD06N06E ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH, ID=80A, RG=25Ω L = 0.05m.

EMD06N06E Datasheet (225.42 KB)