EMD06N06A, Excelliance MOS
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
60V
D
RDSON (MAX.)
6mΩ
ID 68A G
UIS, Rg 10.
EMD06N06H, Excelliance MOS
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
60V
D
RDSON (MAX.)
6mΩ
ID 68A G
UIS, Rg 10.
EMD06N10E, Excelliance MOS
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
100V
D
RDSON (MAX.)
6.5mΩ
ID
135A
G
UIS,.
EMD06N60A, Excelliance MOS
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
600V
D
RDSON (MAX.)
1.55Ω
ID 6A
G
UIS, 10.
EMD06N60CS, Excelliance MOS
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
600V
D
RDSON (MAX.)
1.55Ω
ID 6A
G
UIS, 10.
EMD06N60F, Excelliance MOS
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
600V
D
RDSON (MAX.)
1.55Ω
ID 6A
G
UIS, 10.
EMD06N80F, Excelliance MOS
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
800V
D
RDSON (MAX.)
1.65Ω
ID 6A
G
UIS, 10.
