EMD06N10E Datasheet - Excelliance MOS

EMD06N10E MOSFET

N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V D RDSON (MAX.) 6.5mΩ ID 135A G UIS, Rg 100% Tested S Pb‐Free Lead Plating ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH, ID=75A, RG=25Ω L = 0.05mH Power Dissipation TC = 25 °.

EMD06N10E Datasheet (227.15 KB)