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EMD06N10E MOSFET

EMD06N10E Description

N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V D RDSON (MAX.) 6.5mΩ ID 135A G UIS, Rg 100% Teste.

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Datasheet Details

Part number
EMD06N10E
Manufacturer
Excelliance MOS
File Size
227.15 KB
Datasheet
EMD06N10E-ExcellianceMOS.pdf
Description
MOSFET

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MOSFET Excelliance MOS
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