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Part number:
EMD06N60F
Manufacturer:
Excelliance MOS
File Size:
172.21kb
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📄 Datasheet
Description:
Mosfet.
EMD06N60A - MOSFET
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
600V
D
RDSON (MAX.)
1.55Ω
ID 6A
G
UIS, 10.
EMD06N60CS - MOSFET
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
600V
D
RDSON (MAX.)
1.55Ω
ID 6A
G
UIS, 10.
EMD06N06A - MOSFET
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
60V
D
RDSON (MAX.)
6mΩ
ID 68A G
UIS, Rg 10.
EMD06N06E - MOSFET
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
60V
D
RDSON (MAX.)
6mΩ
ID 125A UIS, Rg 100%.
EMD06N06H - MOSFET
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
60V
D
RDSON (MAX.)
6mΩ
ID 68A G
UIS, Rg 10.
EMD06N10E - MOSFET
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
100V
D
RDSON (MAX.)
6.5mΩ
ID
135A
G
UIS,.
EMD06N80F - MOSFET
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
800V
D
RDSON (MAX.)
1.65Ω
ID 6A
G
UIS, 10.
EMD02N06E - MOSFET
(Excelliance MOS)
EMD02N06E
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
60V
D
RDSON (MAX.)
3.1mΩ
ID
191A
G
UIS, Rg .
EMD02N06TL8 - Single N-Channel Logic Level Enhancement Mode Field Effect Transistor
(Excelliance MOS)
EMD02N06TL8
Single N-Channel Logic Level Enhancement Mode Field Effect Transistor
▪Product Summary:
▪ Pin Description:
N-CH
BVDSS
60V
RDSON (MA.
EMD02N10TL8 - Single N-Channel Logic Level Enhancement Mode Field Effect Transistor
(Excelliance MOS)
Single N-Channel Logic Level Enhancement Mode Field Effect Transistor
▪Product Summary:
▪ Pin Description:
N-CH
BVDSS
100V
RDSON (TYP.)@VGS=10V .
