EMD50N10A Datasheet - Excelliance MOS

EMD50N10A MOSFET

N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V D RDSON (MAX.) 50mΩ ID 25A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH, ID=25A, RG=25Ω L = 0.05mH Power Dissipati.

EMD50N10A-ExcellianceMOS.pdf

EMD50N10A Datasheet Preview — Preview of EMD50N10A PDF

Datasheet Details

Part number:

EMD50N10A

Manufacturer:

Excelliance MOS

File Size:

217.07 KB

Description:

Mosfet.

📁 Related Datasheet

EMD50N10F MOSFET (Excelliance MOS)

EMD50N15A N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

EMD50N15E N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

EMD50N15F Single N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

EMD50N15G N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

EMD5 Dual Digital Transistor (Rohm)

EMD52 Complex Digital Transistors (ROHM)

EMD53 Complex Digital Transistors (ROHM)

TAGS

EMD50N10A EMD50N10A MOSFET Excelliance MOS

EMD50N10A Distributor