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EMD50N15E Datasheet - Excelliance MOS

EMD50N15E N-Channel Logic Level Enhancement Mode Field Effect Transistor

N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 150V D RDSON (MAX.) 50mΩ ID 48A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain‐Source Voltage Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.2mH, IAS=18A, RG=25Ω L = .

EMD50N15E-ExcellianceMOS.pdf

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Datasheet Details

Part number:

EMD50N15E

Manufacturer:

Excelliance MOS

File Size:

247.22 KB

Description:

N-channel logic level enhancement mode field effect transistor.

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EMD50N15E EMD50N15E N-Channel Logic Level Enhancement Mode Field Effect Transistor Excelliance MOS

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